GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, announced the publication of its latest white paper titled The Fundamental ...

A particularly promising candidate for raising the ceiling that limits what’s possible is a variant of the nitride-based HEMT that utilises indium-based nitride semiconductors in the barrier layer – ...

SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...

DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production costs ...

Santa Clara, CA and Kyoto, Japan, Feb. 27, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless (TOLL) package. Featuring a compact design with ...

GaN is, without doubt, the most important and pervasive material within the family of compound semiconductors. It’s initially enjoyed tremendous success within the optoelectronics domain, where it’s ...

A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE ...

GaN Systems offers an evaluation platform for its GaN enhancement-mode high-electron-mobility transistors (E-HEMTs) with half-bridge designs that boost output power by more than 30% without increasing ...

Download this article in PDF format. The end markets serviced by the semiconductor industry are rapidly adopting power semiconductor devices based on wide-bandgap (WBG) semiconductors, including ...

Gallium nitride power devices are used in an increasing number of applications due to their excellent performance. This article explains the main characteristics to consider. A possible study is GaN ...

ROHM product achieves industry-leading device performance metrics among GaN HEMTs in the TOLL package · GlobeNewswire Inc. Santa Clara, CA and Kyoto, Japan, Feb. 27, 2025 (GLOBE NEWSWIRE) -- ROHM ...