A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

Feedback field-effect transistors (FBFETs) represent a significant evolution in semiconductor device technology. Incorporating a positive feedback mechanism, these devices exhibit extremely steep ...

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

The formula for a perovskite compound is typically expressed as ABX3. These are crystalline structures that bond two cations ("A" and "B", divalent metal ion) to an anion ("X"); the "B" atoms tend to ...

Organic field-effect transistors (OFETs) have established themselves as versatile platforms for sensing and optoelectronic detection, benefiting from ...

the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...

(Nanowerk Spotlight) On December 26, 1947, the two physicists Walter Brattain and John Bardeen, officially demonstrated the first point-contact transistor at Bell Labs. Later, in January 1948, William ...

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This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...